Oral presentation

[15a-D411-1~11] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 15, 2020 9:00 AM - 12:00 PM D411 (11-411)

Hiroaki Kariyazaki(GWJ), Toshinori Taishi(Shinshu Univ.), Takuo Sasaki(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [15a-D411-1] Application of Halbach array magnet on the Floating Zone Silicon

〇Xuefeng Han¹, Koichi Kakimoto¹, Kader Zaidat², Samah Alradi² (1.RIAM, Kyushu Univ., 2.Grenoble-Alpes Univ.)

9:15 AM - 9:30 AM

▲ [15a-D411-2] 3D Numerical simulation of resistivity distribution in the FZ silicon process

〇Xuefeng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

9:30 AM - 9:45 AM

▲ [15a-D411-3] Dynamic prediction of the growth interface shape during the pulling process of Czochralski silicon crystal growth

〇Xin Liu¹, Xue-Feng Han¹, Satoshi Nakano¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

9:45 AM - 10:00 AM

[15a-D411-4] Numerical analysis of phosphorus concentration in Si single crystal during directional solidification process

〇Satoshi Nakano¹, Xin Liu¹, Xuefeng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

10:15 AM - 10:30 AM

[15a-D411-5] Atomistic picture of SiO₂/Si interface described by Hakoniwa method

〇Eiji Kamiyama^1,2, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

10:30 AM - 10:45 AM

[15a-D411-6] SHRY: a Suite for High-throughput generation of models with atomic substitutions implemented by python

Keishu Utimula¹, 〇Kousuke Nakano², Genki I. Prayogo¹, Kenta Hongo^2,4,5, Ryo Maezono^2,3 (1.Sch. Mater. Sci., JAIST, 2.Sch. Info. Sci., JAIST, 3.RIKEN, 4.NIMS, 5.PRESTO, JST)

10:45 AM - 11:00 AM

[15a-D411-7] [Highlight]Quantum annealing to evaluate correlation factor in ionic diffusion

〇Ryo Maezono³, Utimula Keishu¹, Ichibha Tom², Kenta Hongo^3,4,5, Kousuke Nakano³ (1.Mater. Sci., JAIST, 2.Oakridge Ntnl Lab., 3.Info. Sci., JAIST, 4.NIMS, 5.PRESTO)

11:00 AM - 11:15 AM

[15a-D411-8] Diffusion of boron in silicon under internal stress field

〇Katsuto Tanahashi¹, Koji Sueoka², Hidetaka Takato¹ (1.AIST, 2.Okayama Pref. Univ.)

11:15 AM - 11:30 AM

△ [15a-D411-9] Luminescence Recombination Mechanism in Si Involving Radiation-Induced Defects

〇Shota Asahara¹, Michio Tajima², Yuta Satake¹, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory)

11:30 AM - 11:45 AM

[15a-D411-10] Analysis of molten KOH etch-pits formed at basal plane dislocations on 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Aoi Okada¹, Ryosuke Iijima¹ (1.Toshiba Corp.)

11:45 AM - 12:00 PM

[15a-D411-11] Impact of PBN discharge tube on nitridation process on sapphire by RF-MBE

〇Kenichi Yajima¹, Naoto Kuwabara¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kougakuin Univ.)

Oral presentation

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 15, 2020 1:45 PM - 3:00 PM D411 (11-411)

Kazuhisa Torigoe(SUMCO)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[15p-D411-1] Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus

〇Takeshi Senda¹, Shingo Narimatsu¹, Yoshiaki Abe¹, Susumu Maeda¹, Hisashi Matsumura¹, Takashi Isikawa¹, Kozo Nakamura² (1.GlobalWafers Japan, 2.Okayama Prefectural Univ.)

2:00 PM - 2:15 PM

[15p-D411-2] Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus

〇Kozo Nakamura¹, Takeshi Senda², Shingo Narimatsu², Susumu maeda² (1.Okayama Pref. Univ., 2.GlobalWafers Japan)

2:15 PM - 2:30 PM

[15p-D411-3] Quality of silicon substrate and point defects (3) On the Precipitate Engineering

〇Naohisa Inoue^1,2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. U.)

2:30 PM - 2:45 PM

[15p-D411-4] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (16) Nitrogen in as-grown silicon crystals

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

2:45 PM - 3:00 PM

[15p-D411-5] Measurement of carbon concentration in silicon crystal
(XX) Version up of the standard Infrared absorption measurement procedure

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Poster presentation

[14p-PB10-1~5] 15.7 Crystal characterization, impurities and crystal defects

Sat. Mar 14, 2020 4:00 PM - 6:00 PM PB10 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[14p-PB10-1] High-resolution and high-speed Raman imaging via ultraviolet/deep-ultraviolet light

〇Kohta Saitoh¹, Mariko Adachi¹, Minoru Kobayashi¹, Satoshi Kawata¹ (1.Nanophoton Corp.)

4:00 PM - 6:00 PM

△ [14p-PB10-2] Photon induced positron annihilation lifetime spectroscopy spectra of multi-component oxide crystals measured using laser-Compton-scattered gamma ray pulses

〇(M1C)Kosuke Fujimori¹, Mamoru Kitaura¹, Yoshitaka Taira², Masaki Fujimoto³, Heishun Zen⁴, Yasuaki Okano⁵, Masahiro Katoh^3,6, Masahito Hosaka⁷, Jun-ichiro Yamazaki³, Kei Kamada⁸, Akimasa Ohnishi¹ (1.Yamagata Univ., 2.AIST, 3.UVSOR,IMS, 4.Kyoto Univ., 5.Mesoscopic,IMS, 6.Hiroshima Univ., 7.Nagoya Univ., 8.Tohoku Univ.)

4:00 PM - 6:00 PM

△ [14p-PB10-3] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

〇(M1)Motoharu Taniguchi¹, Koji Sueoka², Masataka Hourai³ (1.Master of Okyayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO CORPORATION)

4:00 PM - 6:00 PM

△ [14p-PB10-4] First principles analysis of H-doping impact on intrinsic point defect behavior in growing CZ-Si crystal (2)

〇(M1)Takuya Kusunoki¹, Koji Sueoka², Wataru Sugimura³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO)

4:00 PM - 6:00 PM

△ [14p-PB10-5] Effect of Istropic Stress on Stability of Dopant Atom in Si Crystal

〇Hiroya Iwashiro¹, Koji Sueoka², Kazuhisa Torigoe³, Toshiaki Ono³ (1.Graduate School of Engineering Okayama Pref. Univ, 2.Okayama Pref. Univ, 3.SUMCO CORPORATION)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[15a-D411-1~11] 15.7 Crystal characterization, impurities and crystal defects

▲ [15a-D411-1] Application of Halbach array magnet on the Floating Zone Silicon

▲ [15a-D411-2] 3D Numerical simulation of resistivity distribution in the FZ silicon process

▲ [15a-D411-3] Dynamic prediction of the growth interface shape during the pulling process of Czochralski silicon crystal growth

[15a-D411-4] Numerical analysis of phosphorus concentration in Si single crystal during directional solidification process

[15a-D411-5] Atomistic picture of SiO₂/Si interface described by Hakoniwa method

[15a-D411-6] SHRY: a Suite for High-throughput generation of models with atomic substitutions implemented by python

[15a-D411-7] [Highlight]Quantum annealing to evaluate correlation factor in ionic diffusion

[15a-D411-8] Diffusion of boron in silicon under internal stress field

△ [15a-D411-9] Luminescence Recombination Mechanism in Si Involving Radiation-Induced Defects

[15a-D411-10] Analysis of molten KOH etch-pits formed at basal plane dislocations on 4H-SiC

[15a-D411-11] Impact of PBN discharge tube on nitridation process on sapphire by RF-MBE

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1] Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus

[15p-D411-2] Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus

[15p-D411-3] Quality of silicon substrate and point defects (3) On the Precipitate Engineering

[15p-D411-4] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (16) Nitrogen in as-grown silicon crystals

[15p-D411-5] Measurement of carbon concentration in silicon crystal
(XX) Version up of the standard Infrared absorption measurement procedure

[14p-PB10-1~5] 15.7 Crystal characterization, impurities and crystal defects

[14p-PB10-1] High-resolution and high-speed Raman imaging via ultraviolet/deep-ultraviolet light

△ [14p-PB10-2] Photon induced positron annihilation lifetime spectroscopy spectra of multi-component oxide crystals measured using laser-Compton-scattered gamma ray pulses

△ [14p-PB10-3] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

△ [14p-PB10-4] First principles analysis of H-doping impact on intrinsic point defect behavior in growing CZ-Si crystal (2)

△ [14p-PB10-5] Effect of Istropic Stress on Stability of Dopant Atom in Si Crystal

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