[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-4] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (16) Nitrogen in as-grown silicon crystals

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, nitrogen-point defect complex, infrared absorption

Infrared absorption lines at 551 and 688 cm^-1 (assigned as VVNN originated) observed after the irradiation and post anneal of nitrogen doped FZ silicon was examined in as-grown CZ and FZ crystals. 551 cm^-1 absorption line, assigned as nitrogen interstitial N_i originated, was observed in all CZ and FZ crystals with about 1/3 intensity of NN absorption. 689 cm^-1 line was observed in FZ crystal with about 1/5 intensity of N_i signal. It was assigned as vacancy – substitutional nitrogen pair (VN_s). Vacancy in the as-grown Si was directly observed for the first time.