[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-3] Quality of silicon substrate and point defects (3) On the Precipitate Engineering

〇Naohisa Inoue^1,2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. U.)

Keywords:silicon crystal, point defect, precipitate

Silicon crystal growth and its technique are one of most successful industry and technology in Japan. We summarized their history into 4 periods and showed that “the defect engineering” provided the success. In the present paper we examine the Precipitate Engineering (PE) which was the beginning and the biggest success (OSF-free and intrinsic gettering, IG) of the defect engineering. Precipitate engineering is a total system from understanding to application. In each field original and unique tools were developed and the fruit of the former field was used as a tool. The first breakthrough was provided by “the precise and volume defect density measurement” which enabled thermodynamic analysis in contrast to the areal density (etch pit /cm2), and “the quasi-in-situ observation” techniques by TEM.