2:00 PM - 2:15 PM
[15p-D411-2] Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus
Keywords:impurity effect, simulation
In our previous report in this meeting, we reported that heavily phosphorus-doped CZ-Si crystals contain high-density of SiP in the as grown state, which causes epi-defects.
In this report, we investigated the mechanism of SiP formation in the crystal growth process.
Using the reaction model of phosphorus and point defects reported at the previous meeting, we determined the change in supersaturation of interstitial phosphorus Pi during cooling of the crystal growth process.
Pi aggregation (SiP generation) based on the supersaturation of Pi was calculated using a nucleation and growth model, and the size distribution of SiP after cooling was obtained.
As a result, it was shown that the density of as grown SiP in the heavily phosphorus-doped crystals are in good agreement with the calculation results by SiP nucleation and growth model based on the supersaturation degree of interstitial phosphorus Pi.
In this report, we investigated the mechanism of SiP formation in the crystal growth process.
Using the reaction model of phosphorus and point defects reported at the previous meeting, we determined the change in supersaturation of interstitial phosphorus Pi during cooling of the crystal growth process.
Pi aggregation (SiP generation) based on the supersaturation of Pi was calculated using a nucleation and growth model, and the size distribution of SiP after cooling was obtained.
As a result, it was shown that the density of as grown SiP in the heavily phosphorus-doped crystals are in good agreement with the calculation results by SiP nucleation and growth model based on the supersaturation degree of interstitial phosphorus Pi.