Kozo Nakamura

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 1:45 PM - 3:00 PM D411 (11-411)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

2:00 PM - 2:15 PM

[15p-D411-2] Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus

〇Kozo Nakamura¹, Takeshi Senda², Shingo Narimatsu², Susumu maeda² (1.Okayama Pref. Univ., 2.GlobalWafers Japan)