Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 15, 2020 1:45 PM - 3:00 PM D411 (11-411)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[15p-D411-1] Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus

〇Takeshi Senda¹, Shingo Narimatsu¹, Yoshiaki Abe¹, Susumu Maeda¹, Hisashi Matsumura¹, Takashi Isikawa¹, Kozo Nakamura² (1.GlobalWafers Japan, 2.Okayama Prefectural Univ.)

2:00 PM - 2:15 PM

[15p-D411-2] Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus

〇Kozo Nakamura¹, Takeshi Senda², Shingo Narimatsu², Susumu maeda² (1.Okayama Pref. Univ., 2.GlobalWafers Japan)

2:15 PM - 2:30 PM

[15p-D411-3] Quality of silicon substrate and point defects (3) On the Precipitate Engineering

〇Naohisa Inoue^1,2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. U.)

2:30 PM - 2:45 PM

[15p-D411-4] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (16) Nitrogen in as-grown silicon crystals

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

2:45 PM - 3:00 PM

[15p-D411-5] Measurement of carbon concentration in silicon crystal
(XX) Version up of the standard Infrared absorption measurement procedure

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Session information

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1] Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus

[15p-D411-2] Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus

[15p-D411-3] Quality of silicon substrate and point defects (3) On the Precipitate Engineering

[15p-D411-4] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (16) Nitrogen in as-grown silicon crystals

[15p-D411-5] Measurement of carbon concentration in silicon crystal
(XX) Version up of the standard Infrared absorption measurement procedure

Authentication

Session information

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1] Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus

[15p-D411-2] Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus

[15p-D411-3] Quality of silicon substrate and point defects (3) On the Precipitate Engineering

[15p-D411-4] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (16) Nitrogen in as-grown silicon crystals

[15p-D411-5] Measurement of carbon concentration in silicon crystal(XX) Version up of the standard Infrared absorption measurement procedure

Authentication

[15p-D411-5] Measurement of carbon concentration in silicon crystal
(XX) Version up of the standard Infrared absorption measurement procedure