Naohisa Inoue

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 1:45 PM - 3:00 PM D411 (11-411)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

2:15 PM - 2:30 PM

[15p-D411-3] Quality of silicon substrate and point defects (3) On the Precipitate Engineering

〇Naohisa Inoue^1,2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. U.)

2:30 PM - 2:45 PM

[15p-D411-4] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (16) Nitrogen in as-grown silicon crystals

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

2:45 PM - 3:00 PM

[15p-D411-5] Measurement of carbon concentration in silicon crystal
(XX) Version up of the standard Infrared absorption measurement procedure

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)