[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1] Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus

〇Takeshi Senda¹, Shingo Narimatsu¹, Yoshiaki Abe¹, Susumu Maeda¹, Hisashi Matsumura¹, Takashi Isikawa¹, Kozo Nakamura² (1.GlobalWafers Japan, 2.Okayama Prefectural Univ.)

Keywords:semiconductor, silicon, phosphorus

The relationship between the SiP property and the crystal growth conditions of CZ-silicon (Si) with heavily doped phosphorus (P) were systematically investigated. As a result of TEM observation, the SiP density was from 1 × 10¹¹ to 1 × 10¹³ /cm³. From the cooling curve of crystal growth, a correlation was found between the average size of SiP and the passing time during cooling process. The SiP is estimated to have been generated due to aggregation of interstitial P in the cooling process.