[15a-PB3-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

▲ [15a-PB3-12] Activation of Boron Atoms implanted in Sillicon at a low temperature

〇(B)Erika Sekiguchi¹, Tomokazu Nagao², Masahiko Hasumi¹, Yutaka Inouchi², Junichi Tatemichi², Toshiyuki Sameshima¹ (1.TUAT, 2.NISSIN ION)

Keywords:semiconductor, activation, low temperature