[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-A201-12] Different effects between NO-POA and H₂O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements

〇Rimpei Hasegawa¹, Koji Kita¹ (1.Univ. of Tokyo)

Keywords:p-type SiC MOS interface characteristics

Different effects between NO-POA and H₂O-POA processes on p-type SiC MOS interface characteristics detected by photo-assisted C-V measurements and low temperature C-V measurements were clarified.