The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15p-A302-1~12] 15.4 III-V-group nitride crystals

Sun. Mar 15, 2020 1:45 PM - 5:00 PM A302 (6-302)

Narihito Okada(Yamaguchi Univ.), Hideaki Murotani(Tokuyama College)

3:45 PM - 4:00 PM

[15p-A302-8] Light confinement and electroconductivity dependence of AlN molar fraction in composition-graded p-AlGaN cladding layer for UVB-LD

〇(B)Kazuki Yamada1, Kosuke Sato1,2, Shinji Yasue1, Syunya Tanaka1, Shohei Teramura1, Yuya Ogino1, Tomoya Omori1, Sayaka Ishizuka1, Sho Iwayama1,4, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1,3, Hideto Miyake4, Yoshihiro Kangawa5, Konrad Sakowski6 (1.Meijo Univ., 2.Asahi-Kasei Co., 3.Akasaki Res. Cen., Nagoya Univ., 4.Grad. Sch. of Reg. Innov. Stu., Mie Univ., 5.RIAM, Kyushu Univ., 6.Institute of High Pressure Physics)

Keywords:semiconductor, UVB, AlGaN