Optical characterization of AlGaN based current injection type UV-B laser diode

Tomoya Omori; Syunya Tanaka; Kosuke Sato; Shinji Yasue; Yuya Ogino; Kazuki Yamada; Sayaka Ishizuka; Shohei Teramura; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15p-A302-1~12] 15.4 III-V-group nitride crystals

Sun. Mar 15, 2020 1:45 PM - 5:00 PM A302 (6-302)

Narihito Okada(Yamaguchi Univ.), Hideaki Murotani(Tokuyama College)

4:00 PM - 4:15 PM

△ [15p-A302-9] Optical characterization of AlGaN based current injection type UV-B laser diode

〇(B)Tomoya Omori¹, Syunya Tanaka¹, Kosuke Sato^1,2, Shinji Yasue¹, Yuya Ogino¹, Kazuki Yamada¹, Sayaka Ishizuka¹, Shohei Teramura¹, Sho Iwayama^1,4, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3, Hideto Miyake⁴ (1.Fac.Sci&Tec.,Meijo Univ., 2.Asahi-Kasei Corp., 3.Akasaki Research Center, Nagoya, 4.Graduate School of Regional Innovation Studies, Mie Univ.)

Keywords:semiconductor, UV-B, AlGaN