[15p-A302-1~12] 15.4 III-V-group nitride crystals

△ [15p-A302-8] Light confinement and electroconductivity dependence of AlN molar fraction in composition-graded p-AlGaN cladding layer for UVB-LD

〇(B)Kazuki Yamada¹, Kosuke Sato^1,2, Shinji Yasue¹, Syunya Tanaka¹, Shohei Teramura¹, Yuya Ogino¹, Tomoya Omori¹, Sayaka Ishizuka¹, Sho Iwayama^1,4, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3, Hideto Miyake⁴, Yoshihiro Kangawa⁵, Konrad Sakowski⁶ (1.Meijo Univ., 2.Asahi-Kasei Co., 3.Akasaki Res. Cen., Nagoya Univ., 4.Grad. Sch. of Reg. Innov. Stu., Mie Univ., 5.RIAM, Kyushu Univ., 6.Institute of High Pressure Physics)

Keywords:semiconductor, UVB, AlGaN