[15p-B508-8~13] 3.15 Silicon photonics and integrated photonics

△ [15p-B508-13] Examination of wafer bonding using ferroelectric Hf_0.5Zr_0.5O₂ for nonvolatile MOS optical phase shifter

〇Kohei Watanabe¹, Kasidit Toprasertpong², Naoki Sekine², Shinichi Takagi², Mitsuru Takenaka² (1.UTokyo, 2.Tokyo Univ)

Keywords:ferroelectric, optical phase shifter, wafer bonding

HfZrO is promising as a material for a nonvolatile optical phase shifter. However, annealing under capping of metal, which is widely used as a method for obtaining the ferroelectricity of HfZrO, is a concern as an optical phase shifter process. In this study, we demonstrated that a MOS optical phase shifter with a non-volatile memory function by bonding can be realized by using Al2O3 as a capping layer and fabricated by wafer bonding.