4:45 PM - 5:00 PM
△ [15p-B508-13] Examination of wafer bonding using ferroelectric Hf0.5Zr0.5O2 for nonvolatile MOS optical phase shifter
Keywords:ferroelectric, optical phase shifter, wafer bonding
HfZrO is promising as a material for a nonvolatile optical phase shifter. However, annealing under capping of metal, which is widely used as a method for obtaining the ferroelectricity of HfZrO, is a concern as an optical phase shifter process. In this study, we demonstrated that a MOS optical phase shifter with a non-volatile memory function by bonding can be realized by using Al2O3 as a capping layer and fabricated by wafer bonding.