[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-5] Measurement of carbon concentration in silicon crystal
(XX) Version up of the standard Infrared absorption measurement procedure

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

We have developed the infrared absorption measurement procedure of carbon concentration in single and poly silicon crystals down to 10¹³ atoms/cm³. Recommended practice was established by the cooperation with the silicon supplier. SEMI standard practice was reexamined to include the recommended practice.