Hiroshi Ohta

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:30 PM - 5:15 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM

[12p-N305-3] Low on-resistance p-n junction diode using highly Ge-doped GaN substrate II
~ reduced forward-current-density dependence on anode-electrode diameter ~

〇Hiroshi Ohta¹, Naomi Asai¹, Kazuhiro Mochizuki¹, Horikiri Fumimasa², Narita Yoshinobu², Mishima Tomoyoshi¹ (1.Hosei Univ., 2.SCIOCS)