Takashi Ota

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Speaker, Author, Co-Author

Mon. Sep 13, 2021 9:00 AM - 11:45 AM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM

[13a-N305-8] Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows

〇Takashi Ota¹, Mitsutaka Sasaki¹, Ken Takayama¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

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