Gai Ogasawara

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Speaker, Author, Co-Author

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N202 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[10p-N202-1~19] 15.5 Group IV crystals and alloys

3:00 PM - 3:15 PM

△ [10p-N202-7] Determination of Strain-free Raman Shift from Relaxed GeSn Layer

〇(M2)Gai Ogasawara¹, Ryo Yokogawa^1,2, Kazutoshi Yoshioka¹, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Shizuoka Univ., 4.RIE Shizuoka Univ., 5.imec, 6.K. U. Leuven)

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