Sayleap Sdoeung

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:00 PM - 6:15 PM N206 (Oral)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-N206-1~19] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM

▼ [12p-N206-13] Probe-Induced Defect Origin of Reverse Leakage Current in HVPE (001) b-Ga₂O₃ SBDs Identified by High Sensitive Emission Microscope

〇(D)Sayleap Sdoeung¹, Chaman Islam¹, Satoshi Masuya², Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK)