Soichiro Kawata

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:30 PM - 5:15 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM

[12p-N305-4] Breakdown characteristics of p-GaN/AlGaN/GaN diode with controlled charge concentration by changing Mg-doped GaN thickness

〇(M2)Soichiro Kawata¹, Yuwei Zhang¹, Iwata Naotaka¹ (1.Toyota Tech. Inst.)