Sho Hasegawa

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:00 PM - 4:15 PM N406 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:45 PM - 2:00 PM

[12p-N406-4] DLTS study of deep levels in n-type GaAsBi alloy

〇Sho Hasegawa¹, Manuel Fregolent², Matteo Buffolo², Carlo Santi², Gaudenzio Meneghesso², Enrico Zanoni², Junta Mathumura¹, Hiroyuki Nishinaka¹, Matteo Meneghini², Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech., 2.University of Padova)

2:00 PM - 2:15 PM

[12p-N406-5] MBE growth of GaNAsBi/GaAs multiple quantum well structures

〇Sho Hasegawa¹, Hiromu Kawata¹, Ryuya Aoki¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

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