Yuta Komori

→ Search for Yuta Komori in Google Scholar

Speaker, Author, Co-Author

Mon. Sep 13, 2021 9:00 AM - 11:45 AM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM

[13a-N305-1] Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

〇(M1)Yuta Komori¹, Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Masayuki Tsukui², Ichirou Mizushima², Takashi Ida², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NuFlare Technology)

▲