Yusuke Hisatsune

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Speaker, Author, Co-Author

Mon. Sep 13, 2021 9:00 AM - 11:45 AM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM

[13a-N305-9] Study on Widening of Drift Region of GaN FinFETs
for Low On-Resistance and High Breakdown Voltage

〇Yusuke Hisatsune¹, Hoshii Takuya¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Tsutsui Kazuo¹ (1.Tokyo Tech)