Ryuichi Mori

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Speaker, Author, Co-Author

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

5:30 PM - 5:45 PM

△ [13p-N101-17] AlGaN Channel Thickness Dependence on Properties of AlGaN Channel HEMTs on High-Temperature Annealed AlN

〇Ryuichi Mori¹, Kenjiro Uesugi^2,3, Shigeyuki Kuboya², Kanako Shojiki¹, Hideto Miyake^1,3 (1.Grad. Sch. of Eng., Mie Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. of RIS, Mie Univ.)

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