Naoki Sone

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Speaker, Author, Co-Author

Mon. Sep 13, 2021 1:00 PM - 6:00 PM N101 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[13p-N101-1~18] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM

[13p-N101-5] Characterizations of impurity doping in GaN crystal using GaInN/GaN multiple-quantum shell/tunnel junction

〇Naoki Sone^1,2, Yoshiya Miyamoto², Renji Okuda², Kazuma Ito², Shiori Yamamura², Yukimi Jinno², Sae Katsuro², Nanami Nakayama², Koji Okuno³, Weifang Lu², Motoaki Iwaya², Tetsuya Takeuchi², satoshi Kamiyama² (1.KOITO CO., LTD., 2.Meijo Univ., 3.TOYODA GOSEI Co., Ltd.)

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