Isao Takahashi

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Speaker, Author, Co-Author

Mon. Sep 13, 2021 1:00 PM - 4:45 PM S201 (Oral)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-S201-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM

[13p-S201-13] Effect of oxygen partial pressure on b-Ga₂O₃ crystals grown by crucible free techniques

〇Isao Takahashi¹, Taketoshi Tomida¹, Takamasa Sugawara², Nobuhiro Shoji¹, Vladimir Kochurikhin¹, Kei Kamada^1,2, Koichi Kakimoto³, Akira Yoshikawa^1,2 (1.C and A corp., 2.Tohoku Univ., 3.Kyushu Univ.)