Session information

Oral presentation

8 Plasma Electronics » 8.8 Plasma Electronics Division Award Speech

[10p-S301-1~2] 8.8 Plasma Electronics Division Award Speech

Fri. Sep 10, 2021 1:00 PM - 2:00 PM S301 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

[10p-S301-1] [Plasma Electronics Award Speech] Low-temperature synthesis of high-quality graphene using forced-convection of plasma-excited radicals

〇Jaeho Kim¹, Hirotomo Itagaki¹, Hajime Sakakita¹ (1.AIST)

1:30 PM - 2:00 PM

[10p-S301-2] [Plasma Electronics Award Speech] Evaluation of plasma-induced damage in Si substrate using pn junction structures

〇Yoshihiro Sato^1,2, Satoshi Shibata¹, Keiichiro Urabe², Koji Eriguchi² (1.Panasonic Corp., 2.Kyoto Univ.)

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