Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[11a-N302-1~11] 17.3 Layered materials

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N302 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-N302-1] Synthesis of NbS₂ thin films showing superconductivity by chemical vapor deposition

〇Shoki Arasawa¹, Taro Nagahama², Takashi Yanase³, Toshihiro Shimada² (1.CSE.Hokkaido Univ., 2.Eng.Hokkaido Univ., 3.Toho Univ.)

9:15 AM - 9:30 AM

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS₂ atomic layers

〇Mitsuhiro OKADA¹, Yung-Chang Lin¹, Iori Kikuchi², Naoya Okada¹, Wen Hsin Chang¹, Tetsuo Shimizu¹, Toshitaka Kubo¹, Jiang Pu², Taishi Takenobu², Takatoshi Yamada¹, Toshifumi Irisawa¹ (1.AIST, 2.Nagoya Univ.)

9:30 AM - 9:45 AM

[11a-N302-3] Growth mechanism of InSe in metal organic chemical vapor deposition

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

9:45 AM - 10:00 AM

▼ [11a-N302-4] Synthesis of 2D MoS₂ and WS_1-xSe_x thin films by Mist-CVD

〇(D)Abdul A Kuddus¹, Arifuzzaman Rajib¹, Kizaki Ryotaro¹, Yokoyama Kojun¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama University)

10:00 AM - 10:15 AM

△ [11a-N302-5] Fabrication of MoS₂ Films by Reactive Sputtering Method

〇(D)Myeongok Kim^1,2, Maxime Giteau¹, Naoya Miyashita¹, Yoshitaka Okada^1,2 (1.RCAST UTokyo, 2.Grad. School of Eng. UTokyo)

10:15 AM - 10:30 AM

△ [11a-N302-6] Deposition of n-SnSe thin films doped with Bi

〇(M2)Kohei Ishigai¹, Ryoji Katsube¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

10:45 AM - 11:00 AM

[11a-N302-7] Mechanism of monolayer to bilayer silicene transformation in CaSi₂ due to fluorine diffusion

〇Akihiro Nagoya¹, Ritsuko Yaokawa¹, Nobuko Ohba¹ (1.TCRDL)

11:00 AM - 11:15 AM

△ [11a-N302-8] Elucidation of Incubation Time Decision Mechanism for the Growth of Monolayer WS₂

〇(M1)Yuta Iwamoto¹, Xiaoming Qiang¹, Toshiro Kaneko¹, Toshiaki Kato¹ (1.Tohoku Univ.)

11:15 AM - 11:30 AM

▲ [11a-N302-9] Nonlinear mechanical response of ripple structure in MoS₂ nanosheet

〇(D)Lilin Xie¹, Yoshifumi Oshima¹ (1.JAIST)

11:30 AM - 11:45 AM

▲ [11a-N302-10] Synthesis and characterization of thermal properties of a micrometer sized
Graphite-FeCl₃ intercalation compound

〇(M2)Harsh Chandra¹, Junichiro Shiomi¹ (1.The Univ. of Tokyo)

11:45 AM - 12:00 PM

[11a-N302-11] Mechanism of sonication-based selective preparation of 2D thin-layers

〇Tatsuya Nakamoto¹, Takeshi Yoshimura¹, Norifumi Fujimura¹, Daisuke Kiriya¹ (1.Osaka Pref. Univ.)

Session information

[11a-N302-1~11] 17.3 Layered materials

[11a-N302-1] Synthesis of NbS₂ thin films showing superconductivity by chemical vapor deposition

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS₂ atomic layers

[11a-N302-3] Growth mechanism of InSe in metal organic chemical vapor deposition

▼ [11a-N302-4] Synthesis of 2D MoS₂ and WS_1-xSe_x thin films by Mist-CVD

△ [11a-N302-5] Fabrication of MoS₂ Films by Reactive Sputtering Method

△ [11a-N302-6] Deposition of n-SnSe thin films doped with Bi

[11a-N302-7] Mechanism of monolayer to bilayer silicene transformation in CaSi₂ due to fluorine diffusion

△ [11a-N302-8] Elucidation of Incubation Time Decision Mechanism for the Growth of Monolayer WS₂

▲ [11a-N302-9] Nonlinear mechanical response of ripple structure in MoS₂ nanosheet

▲ [11a-N302-10] Synthesis and characterization of thermal properties of a micrometer sized
Graphite-FeCl₃ intercalation compound

[11a-N302-11] Mechanism of sonication-based selective preparation of 2D thin-layers

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Session information

[11a-N302-1~11] 17.3 Layered materials

[11a-N302-1] Synthesis of NbS2 thin films showing superconductivity by chemical vapor deposition

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS2 atomic layers

[11a-N302-3] Growth mechanism of InSe in metal organic chemical vapor deposition

▼ [11a-N302-4] Synthesis of 2D MoS2 and WS1-xSex thin films by Mist-CVD

△ [11a-N302-5] Fabrication of MoS2 Films by Reactive Sputtering Method

△ [11a-N302-6] Deposition of n-SnSe thin films doped with Bi

[11a-N302-7] Mechanism of monolayer to bilayer silicene transformation in CaSi2 due to fluorine diffusion

△ [11a-N302-8] Elucidation of Incubation Time Decision Mechanism for the Growth of Monolayer WS2

▲ [11a-N302-9] Nonlinear mechanical response of ripple structure in MoS2 nanosheet

▲ [11a-N302-10] Synthesis and characterization of thermal properties of a micrometer sizedGraphite-FeCl3 intercalation compound

[11a-N302-11] Mechanism of sonication-based selective preparation of 2D thin-layers

Authenticate

[11a-N302-1] Synthesis of NbS₂ thin films showing superconductivity by chemical vapor deposition

△ [11a-N302-2] Gas-source chemical vapor deposition growth of 1T′-phase WS₂ atomic layers

▼ [11a-N302-4] Synthesis of 2D MoS₂ and WS_1-xSe_x thin films by Mist-CVD

△ [11a-N302-5] Fabrication of MoS₂ Films by Reactive Sputtering Method

[11a-N302-7] Mechanism of monolayer to bilayer silicene transformation in CaSi₂ due to fluorine diffusion

△ [11a-N302-8] Elucidation of Incubation Time Decision Mechanism for the Growth of Monolayer WS₂

▲ [11a-N302-9] Nonlinear mechanical response of ripple structure in MoS₂ nanosheet

▲ [11a-N302-10] Synthesis and characterization of thermal properties of a micrometer sized
Graphite-FeCl₃ intercalation compound