Session information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-N101-1~9] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 9:00 AM - 11:30 AM N101 (Oral)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-N101-1] Microstructural Characterization of GaN films Grown on ScAlMgO₄ Substrate by RF-MBE

〇Yuichi Wada¹, Yuya Kuroda¹, Seiya Kayamoto¹, Naoki Goto¹, Takashi Fuji^1,2, Shinichiro Mouri¹, Yuji Shiraishi², Tsuguo Fukuda², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal lab.)

9:15 AM - 9:30 AM

[13a-N101-2] Growth of InGaN Film on ScAlMgO₄Substrate by RF-MBE Ⅱ

〇(D)Naoki Goto¹, Seiya Kayamoto¹, Yuuya Kuroda¹, yuuichi wada¹, Takashi Fujii^1,2, Shinichiro Mouri¹, Yuuji Shiraishi², Tuguo Fukuda², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal Lab.)

9:30 AM - 9:45 AM

△ [13a-N101-3] Optical properties of InGaN / AlGaN MQWs on (0001) and (10-11) plane InGaN / GaN nanocolumns

〇Jumpei Yamada¹, Tatsuya Honda¹, Ai Mizuno¹, Rie Togashi^1,2, Ichirou Nomura^1,2, Tomohiro Yamaguchi³, Tohru Honda³, Katsumi Kishino¹ (1.Sophia Nanotech., 2.Sophia Univ., 3.Kogakuin Univ.)

9:45 AM - 10:00 AM

△ [13a-N101-4] Control of Luminescence Spectrum of InGaN/GaN Nanocolumns by n-GaN Column Top Angle

〇(M1)Kenya Yoshimura¹, Koji Takahashi¹, Keiji Takimoto¹, Tatsuya Honda², Jumpei Yamada², Rie Togashi^1,2, Ichirou Nomura^1,2, Katsumi Kishino² (1.Sophia Univ., 2.Sophia Nanotech.)

10:00 AM - 10:15 AM

△ [13a-N101-5] Emission color control in InGaN/GaN ordered nanocolumn arrays with high filling factor

〇(M1)Koji Takahashi¹, Keiji Takimoto¹, Kenya Yoshimura¹, Jumpei Yamada², Tatsuya Honda², Rie Togashi^1,2, Ichirou Nomura^1,2, Katsumi Kishino² (1.Sophia Univ., 2.Sophia Nanotech)

10:30 AM - 10:45 AM

[13a-N101-6] Improved electron mobility in InN/GaN heterostructure

〇Taiki Ito¹, Junichiro Kitamura¹, Kenta Tsukamoto¹, Shuto Murakumo¹, Hirokazu Sasaki¹, Ryota Doi¹, Daiki Nagatsuyu¹, Toshiki Makimoto¹ (1.Waseda Univ.)

10:45 AM - 11:00 AM

[13a-N101-7] InGaN on a quartz glass substrate grown by RF-MBE

〇(M1)Junichiro Kitamura¹, Kenta Tsukamoto¹, Shuto Murakumo¹, Taiki Ito¹, Shota Matsuo¹, Toshiki Makimoto¹ (1.Waseda Univ.)

11:00 AM - 11:15 AM

[13a-N101-8] Two-step growth of InN on a quartz glass substrate using high-temperature InGaN buffer layer by RF-MBE

〇Kenta Tsukamoto¹, Junichiro Kitamura¹, Shuto Murakumo¹, Taiki Ito¹, Masataka Toki¹, Shota Matsuo¹, Toshiki Makimoto¹ (1.Waseda Univ.)

11:15 AM - 11:30 AM

[13a-N101-9] InN grown on a polyimide substrate by RF-MBE

〇Shuto Murakumo¹, Taiki Ito¹, Junichiro Kitamura¹, Kenta Tsukamoto¹, Toshiki Makimoto¹ (1.Waseda Univ.)

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