Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[13a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Mon. Sep 13, 2021 9:00 AM - 12:00 PM N304 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-N304-1] A New Formulation of the Ground State of 2DEG in Channels with Surface Roughness and Impact of the Surface-Roughness-Limited Mobility

〇(DC)Kei Sumita¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.U. Tokyo)

9:15 AM - 9:30 AM

[13a-N304-2] A Charge-Based Analytical Threshold Voltage Definition Applicable to Cryogenic Temperatures

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, TAKUYA SARAYA¹, MASAHARU KOBAYASHI^1,2, TOSHIRO HIRAMOTO¹ (1.IIS, Univ. Tokyo, 2.d.lab, Univ. Tokyo)

9:30 AM - 9:45 AM

[13a-N304-3] Statistical analysis of characteristics variability in bulk MOSFETs at Low Temperatures

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.d.lab, Univ of Tokyo)

9:45 AM - 10:00 AM

[13a-N304-4] Formation of electron-hole coexisting system by gate control in Si MOSFET

〇(M1)Jinya Kume¹, Yukinori Ono^1,2, Masahiro Hori^1,2 (1.Shizuoka Univ., 2.RIE, Shizuoka Univ.)

10:00 AM - 10:15 AM

[13a-N304-5] Characterization of sensitivity of a p-channel physically-definedsilicon quantum-dot RF charge sensor

〇Raisei Mizokuchi¹, Shimpei Nishiyama^1,2, Kimihiko Kato², Yongxun Liu², Shigenori Murakami², Takahiro Mori², Jun Yoneda¹, Tetsuo Kodera¹ (1.Tokyo Tech., 2.AIST)

10:15 AM - 10:30 AM

△ [13a-N304-6] Magnetic field dependence of hole spin resonance in a physically defined silicon quantum dot

〇(M2)Yusaku Suzuki¹, Masahiro Tadokoro¹, Irsyadul Ibad Sayyid¹, Simpei Nishiyama^1,2, Kimihiko Kato², Yongxun Liu², Shigenori Murakami², Takahiro Mori², Raisei Mizokuchi¹, Jun Yoneda¹, Tetsuo Kodera¹ (1.Tokyo Tech., 2.AIST)

10:45 AM - 11:00 AM

[13a-N304-7] High-speed operation and integration of spin qubits with buried nanomagnet structure

〇Shota Iizuka¹, Kimihiko Kato¹, Atsushi Yagishita¹, Hidehiro Asai¹, Tetsuya Ueda¹, Hiroshi Oka¹, Junichi Hattori¹, Tsutomu Ikegami¹, Koichi Fukuda¹, Takahiro Mori¹ (1.AIST)

11:00 AM - 11:15 AM

[13a-N304-8] Development of EB lithography technique with negative resist for integrated silicon qubits

〇Kimihiko Kato¹, Yongxun Liu¹, Shigenori Murakami¹, Yukinori Morita¹, Takahiro Mori¹ (1.AIST)

11:15 AM - 11:30 AM

[13a-N304-9] Selective confinement of single flying electrons to surface acoustic waves

〇Shunsuke Ota^1,2, Hermann Edlbauer³, Junliangn Wang³, Shintaro Takada², Shuji Nakamura², Yuma Okazaki², Christopher Bauerle³, Nobu-Hisa Kaneko², Tetsuo Kodera¹ (1.Tokyo Tech., 2.AIST, 3.Inst. Neel)

11:30 AM - 11:45 AM

[13a-N304-10] Detection of arsenic donor electrons using CP EDMR in Si MOSFETs

〇Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

11:45 AM - 12:00 PM

[13a-N304-11] Fabrication and low-temperature measurements of 4-terminal Si Esaki diode

〇(M1)Suzuka Kimpara¹, Takuya Kato¹, Masahiro Hori^1,2, Yukinori Ono^1,2 (1.Shizuoka Univ., 2.RIE, Shizuoka Univ.)

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