[13a-S301-1~7] 6.2 Carbon-based thin films

Mon. Sep 13, 2021 9:30 AM - 11:15 AM S301 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [13a-S301-1] Development of heavily nitrogen-doped diamond growth with suppression of 2D nucleation

〇Yuta Nakano¹, Shu Inagaki¹, Kazuki Kobayashi¹, Xufang Zhang¹, Tsubasa Matsumoto¹, Takao Inokuma¹, Satoshi Yamasaki¹, Christoph E. Nebel^1,2, Norio Tokuda¹ (1.Kanazawa Univ., 2.Diacara)

9:45 AM - 10:00 AM

△ [13a-S301-2] Growth Mechanism of Wide and High Quality of Heteroepitaxial Diamond on Sapphire Substrate

〇(M2)Ryota Takaya¹, Ryo Masaki¹, Seong-Woo Kim², Saha Niloy Chandra¹, Makoto Kasu¹ (1.Saga Univ, 2.Adamant Namiki Precision)

10:00 AM - 10:15 AM

[13a-S301-3] High Quality Heteroepitaxial Diamond by Using Step-Flow Growth

〇Seongwoo Kim¹, Ryota Tkaya², Shintaro Hirano¹, Yuki Kawamata¹, Makoto Kasu² (1.Adamant Namiki Precision Jewel Co., Ltd., 2.Saga Univ.)

10:15 AM - 10:30 AM

[13a-S301-4] Deposition of Diamond Films on Cemented Carbide Substrates by Hot Filament CVD Method and Observation of Anomalous Growth

〇Yoshinori Saiki¹, Bando Takahiro¹, Toru Harigai¹, Hirofumi Takikawa¹, Takahiro Hattori², Hiroaki Sugita² (1.Toyohashi Univ. Technol., 2.OSG coating service)

10:30 AM - 10:45 AM

[13a-S301-5] HPHT synthesis and characterization of diamond grains containing cubic boron nitride

〇Ryuji Oshima¹, XiangRen Cui², Kanji Iizuka¹ (1.NIT, 2.JingRi Dia. Compo. Mat. co., ltd)

10:45 AM - 11:00 AM

[13a-S301-6] Effect of Er ion implantation and ultra high pressure and high temperature treatment on diamond

〇Daiki Toriu¹, Kento Higashiura¹, Rei Fukuta¹, Fumitaro Ishikawa^1,2, Toru Shinmei², Tetsuo Irifune² (1.Ehime Univ., 2.Ehime Univ. GRC)

11:00 AM - 11:15 AM

[13a-S301-7] Local Structures of P Atoms Implanted in Diamond Substrates Studied by X-ray Absorption Near Edge Structure Analysis

〇Yasushi Hoshino¹, Yuhei Seki¹, Kei Mitsuhara² (1.Kanagawa Univ., 2.Ritsumeikan Univ.)

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