[22a-P01-1~4] 6.1 Ferroelectric thin films

Wed. Sep 22, 2021 9:00 AM - 10:40 AM P01 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 10:40 AM

[22a-P01-1] Noise Reduction by Principal Component Analysis for Local C-V Mapping

〇Yoshiomi Hiranaga¹, Takanori Mimura², Takao Shimizu², Hiroshi Funakubo², Yasuo Cho¹ (1.Tohoku Univ., 2.Tokyo Tech.)

9:00 AM - 10:40 AM

[22a-P01-2] Effect of BNF film thickness on photovoltaic characteristics of ferroelectric thin films

〇Masahiro Yoshida¹, Yasuhide Hashimoto¹, Akiharu Morimoto² (1.Grad. School of Nat. Sci. and Tech., Kanazawa Univ., 2.College of Sci. and Eng., Kanazawa Univ.)

9:00 AM - 10:40 AM

[22a-P01-3] Evaluation of stress distribution using flexible piezoelectric matrix sensor

〇Ryogo Yokoyama¹, Takashi Nakajima¹, Masahiro Sato² (1.Tokyo Univ of Sci., 2.MEMS CORE)

9:00 AM - 10:40 AM

▲ [22a-P01-4] Polarity inversion of scandium aluminum nitride (ScAlN) piezoelectric thin films by using Ge addition

〇Sri Ayu Anggraini¹, Masato Uehara¹, Kenji Hirata¹, Hiroshi Yamada¹, Morito Akiyama¹ (1.AIST)

Session information

[22a-P01-1~4] 6.1 Ferroelectric thin films

[22a-P01-1] Noise Reduction by Principal Component Analysis for Local C-V Mapping

[22a-P01-2] Effect of BNF film thickness on photovoltaic characteristics of ferroelectric thin films

[22a-P01-3] Evaluation of stress distribution using flexible piezoelectric matrix sensor

▲ [22a-P01-4] Polarity inversion of scandium aluminum nitride (ScAlN) piezoelectric thin films by using Ge addition

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