Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[23p-P07-1~16] 15.4 III-V-group nitride crystals

Thu. Sep 23, 2021 1:00 PM - 2:40 PM P07 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 2:40 PM

[23p-P07-1] Growth of Hexagonal Boron Nitride Thin Films by CVD on Nickel Buffer Layers

〇Yuki Tanaka¹, Taira Watanabe¹, Riku Yoshioka¹, Katsumi Masuda¹, Taiki Oishi¹, Kirari Masuda¹, Hiroko Kominami¹, Kazuhiko Hara¹ (1.Shizuoka Univ.)

1:00 PM - 2:40 PM

[23p-P07-2] Growth of ultra-thin GaN/AlN superlattice structure by RF-MBE

〇Naoya Mokutani¹, Yuichi Wada¹, Shinichiro Mouri¹, Kanako Shojiki², Hideto Miyake^2,3, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Grad. Sch. of Eng., Mie Univ., 3.Grad. Sch. of RIS., Mie Univ.)

1:00 PM - 2:40 PM

[23p-P07-3] Dependence of GaN/ScAlMgO₄ growth mode by RF-MBE on step distance of substrates

〇Yuya Kuroda¹, Yuichi Wada¹, Seiya Kayamoto¹, Naoki Goto¹, Takashi Fuji^1,2, Shinichiro Mouri¹, Yuji Shiraishi², Tsuguo Fukuda², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal Lab.)

1:00 PM - 2:40 PM

[23p-P07-4] Effect of growth temperature on crystal orientation of GaN growth on graphene/r-plane sapphire substrate

〇Kazuki Niwa¹, Masami Nonogaki¹, Yukito Kato¹, Yasuhiro Fukunishi¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

1:00 PM - 2:40 PM

[23p-P07-5] GaN low-angle incident microchannel epitaxy using graphene microchannel
--- Guarantee of growth selectivity ---

〇(M1)Yukito Kato¹, Masami Nonogaki¹, Kazuki Niwa¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

1:00 PM - 2:40 PM

[23p-P07-6] Influence of substrate temperature for gallium nitride film deposition using high-density convergent plasma sputtering device

〇Taisei Motomura¹, Tatsuo Tabaru¹, Masato Uehara¹ (1.AIST)

1:00 PM - 2:40 PM

[23p-P07-7] Growth mechanism of GaN layer by UHV sputter epitaxy method

〇(M1)Genki Saito¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

1:00 PM - 2:40 PM

[23p-P07-8] Characterization of GaInN multi-layer grown on strain-controlled layer by RF-MBE

〇Masaki Matsuda¹, Ryosuke Yoshida¹, Kaigo Tahara¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ.)

1:00 PM - 2:40 PM

[23p-P07-9] Photoluminescence properties on InN grown on AlN template by RF-MBE

〇Daiki Nakayama¹, Shinichiro Mori¹, Anri Fukuda¹, Yusuke Takabayashi¹, Kanako Shojiki², Hideto Miyake^2,3, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Grad. School of Eng., 3.Grad. School of RIS)

1:00 PM - 2:40 PM

[23p-P07-10] A Study on temperature dependence of InN growth using DERI method

〇(M2)Tongzhou Zhang¹, Naoki Goto¹, Shinichiro Mouri¹, Tsutomu Araki¹ (1.Ritsumeikan Univ.)

1:00 PM - 2:40 PM

[23p-P07-11] InN growth on N-polar AlN template by RF-MBE

〇Yuhei Shinoda¹, Anri Fukuda¹, Hidenori Tachibana¹, Shinichiro Mori¹, Kanako Shojiki², Hideto Miyake^2,3, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Grad.Sch. of Eng., Mie Univ., 3.Grad.Sch. of RIS., Mie Univ.)

1:00 PM - 2:40 PM

[23p-P07-12] Correlation between Peak Wavelength and Peak Intensity in Polar/Semi-polar InGaN/GaN Quantum Wells by Micro PL Mapping Measurements

〇Kanata Kawai¹, Kento Ikeda¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

1:00 PM - 2:40 PM

[23p-P07-13] Cathodoluminescence intensity profile at dark spot in AlGaN epilayers with various Al composition

〇Satoshi Kurai¹, Shun Hirayama¹, Jin Li¹, Fumiya Nakatani¹, Narihito Okada¹, Hideto Miyake^2,3, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Grad. Sch. of Eng., Mie Univ., 3.Grad Sch. of Regional Innovation Studies, Mie Univ.)

1:00 PM - 2:40 PM

[23p-P07-14] An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN

〇(M2)Katsuhide Niki¹, Toru Akiyama¹, Tomonori Ito¹ (1.Mie Univ.)

1:00 PM - 2:40 PM

[23p-P07-15] Theoretical investigations for structure and stability at the GaN/β-Ga₂O₃ interface

〇(M2)Fumiaki Hishiki¹, Toru Akiyama¹, Takahiro Kawamura¹, Tomonori Ito¹ (1.Mie Univ.)

1:00 PM - 2:40 PM

[23p-P07-16] Analysis on electrical properties of recessed normally-on AlGaN/GaN HFETs

〇Seishin Fu¹, Kouki Kaneda¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science,the Univ. of Tokyo)

Session information

[23p-P07-1~16] 15.4 III-V-group nitride crystals

[23p-P07-1] Growth of Hexagonal Boron Nitride Thin Films by CVD on Nickel Buffer Layers

[23p-P07-2] Growth of ultra-thin GaN/AlN superlattice structure by RF-MBE

[23p-P07-3] Dependence of GaN/ScAlMgO₄ growth mode by RF-MBE on step distance of substrates

[23p-P07-4] Effect of growth temperature on crystal orientation of GaN growth on graphene/r-plane sapphire substrate

[23p-P07-5] GaN low-angle incident microchannel epitaxy using graphene microchannel
--- Guarantee of growth selectivity ---

[23p-P07-6] Influence of substrate temperature for gallium nitride film deposition using high-density convergent plasma sputtering device

[23p-P07-7] Growth mechanism of GaN layer by UHV sputter epitaxy method

[23p-P07-8] Characterization of GaInN multi-layer grown on strain-controlled layer by RF-MBE

[23p-P07-9] Photoluminescence properties on InN grown on AlN template by RF-MBE

[23p-P07-10] A Study on temperature dependence of InN growth using DERI method

[23p-P07-11] InN growth on N-polar AlN template by RF-MBE

[23p-P07-12] Correlation between Peak Wavelength and Peak Intensity in Polar/Semi-polar InGaN/GaN Quantum Wells by Micro PL Mapping Measurements

[23p-P07-13] Cathodoluminescence intensity profile at dark spot in AlGaN epilayers with various Al composition

[23p-P07-14] An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN

[23p-P07-15] Theoretical investigations for structure and stability at the GaN/β-Ga₂O₃ interface

[23p-P07-16] Analysis on electrical properties of recessed normally-on AlGaN/GaN HFETs

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