[10a-N202-1~10] 15.5 Group IV crystals and alloys

[10a-N202-4] Mg induced lateral crystallization of amorphous Ge on SiO₂

〇Towa Hirai¹, Rikuto Abe¹, Akira Honda¹, Atsuki Morimoto¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT(KOSEN),Kumamoto College)

Keywords:semiconductor, crystallinity

We have investigated that Mg induced lateral crystallization of amorphous Ge on SiO₂ / Si substrate. The results demonstrated that the Mg induced lateral crystallization of amorphous Ge on insulating substrate was significantly enhanced by using 2 step annealing process. This enhancement was attributed to the ease of Mg atoms diffusion into amorphous Ge region.