Oral presentation

[10a-N202-1~10] 15.5 Group IV crystals and alloys

Fri. Sep 10, 2021 9:30 AM - 12:00 PM N202 (Oral)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[10a-N202-1] [Young Scientist Presentation Award Speech] Investigation of the physical origin affecting the electrical properties of solid-phase crystallized Ge thin films

〇Toshifumi Imajo^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

9:45 AM - 10:00 AM

△ [10a-N202-2] First demonstration of photoresponsivity in a polycrystalline Ge-based thin film

〇Takuto Mizoguchi¹, Kenta Moto², Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.Kyushu Univ.)

10:00 AM - 10:15 AM

△ [10a-N202-3] Impact of Light-absorbing Layer on Laser-induced Liquid-phase Crystallization of GeSn Wires on Quartz Substrate

〇Naoto Tabuchi¹, Mizuki Kuniyoshi², Takuji Hosoi¹, Takuma Kobayashi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Graduate School of Engineering, Osaka Univ., 2.ULVAC, Inc.)

10:15 AM - 10:30 AM

[10a-N202-4] Mg induced lateral crystallization of amorphous Ge on SiO₂

〇Towa Hirai¹, Rikuto Abe¹, Akira Honda¹, Atsuki Morimoto¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT(KOSEN),Kumamoto College)

10:30 AM - 10:45 AM

[10a-N202-5] Low temperature Sn induced lateral crystallization for amorphous Ge on SiO₂

〇Kaisei Wakishima¹, Daichi Koriyama¹, Kento Kiyofuji¹, Ryoki Ryu¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT(KOSEN) Kumamoto College)

10:45 AM - 11:00 AM

[10a-N202-6] Ni-induced lateral crystallization of amorphous Ge(Sn) thin films

〇Takamitsu Ishiyama¹, Toshifumi Imajo¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

11:00 AM - 11:15 AM

[10a-N202-7] Improved Mobility of Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge / Insulator by adding a-Si cap

〇Ryutaro Hara¹, Masanori Chiyozono¹, Kenta Moto^2,3, Keisuke Yamamoto², Taizoh Sadoh¹ (1.Kyushu Univ. ISEE, 2.Kyushu Univ. IGSES, 3.JSPS Research Fellow)

11:15 AM - 11:30 AM

[10a-N202-8] Influence of Sn concentration on solid-phase crystallized GeSn thin-film transistors

〇Kenta Moto^1,2, Keisuke Yamamoto¹, Toshifumi Imajo^2,3, Takashi Suemasu³, Hiroshi Nakashima¹, Kaoru Toko³ (1.Kyushu Univ., 2.JSPS Res. Fellow, 3.Univ. of Tsukuba)

11:30 AM - 11:45 AM

△ [10a-N202-9] High photoresponsivity in grain-size-controlled GaAs layers formed on glass using Ge seed layers

〇Takeshi Nishida^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

11:45 AM - 12:00 PM

[10a-N202-10] In-Situ Observation and Characterization of SiGe Alloyed Films
Formed by Pre-Alloyed Pastes on Si Substrate

〇Keisuke Fukuda¹, Satoru Miyamoto¹, Masahiro Nakahara^1,2, Shota Suzuki^2,3, Marwan Dhamrin^2,3, Kensaku Maeda⁴, Kozo Fujiwara⁴, Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Aluminum K.K., 3.Osaka Univ., 4.IMR, Tohoku Univ.)

Oral presentation

[10p-N202-1~19] 15.5 Group IV crystals and alloys

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N202 (Oral)

Masashi Kurosawa(Nagoya Univ.), Kaoru Toko(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-N202-1] Rapid trench-filling growth of Ge epitaxial layer on Si

Kazuki Motomura¹, 〇Kota Kato¹, Piedra-Lorenzana Jose A.¹, Bin Amin Mohd Faiz¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Univ., 2.SUMCO Corporation)

1:45 PM - 2:00 PM

▲ [10p-N202-2] Ge epitaxial layer with a low dislocation density grown on arrayed SOI strips

〇(M1)FAIZ FAIZ MOHD¹, Kazuki Motomura¹, Takeshi Hizawa¹, Jose A. Piedra-Lorenzana¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Univ, 2.SUMCO Corporation)

2:00 PM - 2:15 PM

△ [10p-N202-3] Control of crack formation and propagation direction in strained SiGe/Ge(111)

〇Youya Wagatsuma¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Rena Kanesawa¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

2:15 PM - 2:30 PM

▲ [10p-N202-4] Dopant Redistribution in High Temperature Grown Sb-doped Ge Epitaxial Films

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

2:30 PM - 2:45 PM

[10p-N202-5] Enhancement of RT EL emission intensity in Ge-on-Si (111) diodes by annealing

〇Yuwa Sugiura¹, Masashi Sasaki¹, Youya Wagatsuma¹, Koudai Yamada¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya², Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.CSRN, Osaka Univ.)

2:45 PM - 3:00 PM

[10p-N202-6] Effects of i-Ge Thickness on Room-temperature Electroluminescence from Ge-on-Si(100) p-i-n Diodes

〇Masashi Sasaki¹, Yuwa Sugiura¹, Youya Wagatsuma¹, Sawano Kentaro¹, Kodai Yamada¹ (1.Tokyo City Univ.)

3:00 PM - 3:15 PM

△ [10p-N202-7] Determination of Strain-free Raman Shift from Relaxed GeSn Layer

〇(M2)Gai Ogasawara¹, Ryo Yokogawa^1,2, Kazutoshi Yoshioka¹, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Shizuoka Univ., 4.RIE Shizuoka Univ., 5.imec, 6.K. U. Leuven)

3:15 PM - 3:30 PM

△ [10p-N202-8] Band-Edge PL Emission from Unstrained GeSn (Sn 9%)

〇Cali Shizuru Matsunaga¹, Ryo Yokogawa^1,2, Yuta Satake¹, Gai Ogasawara¹, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Shizuoka Univ., 4.RIE Shizuoka Univ., 5.imec, 6.K. U. Leuven)

3:30 PM - 3:45 PM

[10p-N202-9] Fabrication of strain-relaxed SiGe buffer layer on Si (111) and annealing effect

〇Kazuya Okada¹, Youya Wagatsuma¹, Kodai Yamada¹, Takahiro Inoue¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:45 PM - 4:00 PM

△ [10p-N202-10] Optical Properties of Bulk SiGe in the Near Infrared Evaluated by Spectroscopic Ellipsometry

〇Yuki Shibayama¹, Ryo Yokogawa^1,2, Yasutomo Arai³, Ichiro Yonenaga⁴, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory, 3.JAXA, 4.Tohoku Univ.)

4:15 PM - 4:30 PM

△ [10p-N202-11] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (II)

〇Kazutoshi Yoshioka¹, Gai Ogasawara¹, Kirito Cho¹, Yuta Ito¹, Sho Sugawa¹, Ichiro Hirosawa^2,3, Takeshi Watanabe⁴, Ryo Yokogawa^1,3, Atsushi Ogura^1,3 (1.Meiji Univ., 2.SAGA-LS, 3.MREL, 4.JASRI)

4:30 PM - 4:45 PM

[10p-N202-12] Resonance phenomena in uniaxial strained Ge microbridge structures

〇Takahiro Inoue¹, Youya Wagatsuma¹, Reo Ikegaya¹, Kazuya Okada¹, Kentarou Sawano¹ (1.Adv.Res.Lab., Tokyo City Univ)

4:45 PM - 5:00 PM

[10p-N202-13] Fabrication of strained Ge microbridge structures with meshed pads and luminescence properties

〇Reo Ikegaya¹, Takahiro Inoue¹, Masashi Sasaki¹, Youya Wgatsuma¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

5:00 PM - 5:15 PM

[10p-N202-14] Study on Correlation between Broad Peaks in Raman Spectra of Extremely Thin GOI Observed by Oil-Immersion Raman Spectroscopy and Strain States

〇Ryo Yokogawa^1,2, Chia-Tsong Chen³, Kasidit Toprasertpong³, Mitsuru Takenaka³, Shinichi Takagi³, Astushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Univ. of Tokyo)

5:15 PM - 5:30 PM

[10p-N202-15] Formation of calcium silicides on SOI substrates

〇(M2)Yoshitsune Ito¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

5:30 PM - 5:45 PM

[10p-N202-16] Solid phase crystallization of CaGe₂ layers on insulator

〇Ryo Oishi¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

5:45 PM - 6:00 PM

△ [10p-N202-17] High quality Ge on epitaxial Co₂FeSi for semiconductor based vertical spin devices

〇Atsuya Yamada¹, Michihiro Yamada^2,3, Shinya Yamada^3,1, Kentarou Sawano⁴, Kohei Hamaya^3,1 (1.Osaka Univ., 2.JST-PRESTO., 3.CSRN, Osaka Univ., 4.Tokyo City Univ.)

6:00 PM - 6:15 PM

[10p-N202-18] Impact of Substrate Heating on Surface Flattening and Ge Segregaion of Al/Ge(111)

〇Keigo Matsushita¹, Akio Ohta¹, Noriyuki Taoka¹, Shohei Hayashi², Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Toray Research Center Inc.)

6:15 PM - 6:30 PM

[10p-N202-19] Crystal structure evaluation of multilayered germanane flakes by transmission powder X-ray diffraction

〇Mai Itoh¹, Masaaki Araidai², Akio Ohta¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Poster presentation

[23p-P08-1~2] 15.5 Group IV crystals and alloys

Thu. Sep 23, 2021 1:00 PM - 2:40 PM P08 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 2:40 PM

[23p-P08-1] Crystal growth of Si_1−xSn_x thin films on GaAs substrates

〇Kazuaki Fujimoto¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

1:00 PM - 2:40 PM

[23p-P08-2] Formation of CaGe₂ thin-films on high resistivity substrates

〇Kazuya Okada¹, Mai Itoh¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[10a-N202-1~10] 15.5 Group IV crystals and alloys

[10a-N202-1] [Young Scientist Presentation Award Speech] Investigation of the physical origin affecting the electrical properties of solid-phase crystallized Ge thin films

△ [10a-N202-2] First demonstration of photoresponsivity in a polycrystalline Ge-based thin film

△ [10a-N202-3] Impact of Light-absorbing Layer on Laser-induced Liquid-phase Crystallization of GeSn Wires on Quartz Substrate

[10a-N202-4] Mg induced lateral crystallization of amorphous Ge on SiO₂

[10a-N202-5] Low temperature Sn induced lateral crystallization for amorphous Ge on SiO₂

[10a-N202-6] Ni-induced lateral crystallization of amorphous Ge(Sn) thin films

[10a-N202-7] Improved Mobility of Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge / Insulator by adding a-Si cap

[10a-N202-8] Influence of Sn concentration on solid-phase crystallized GeSn thin-film transistors

△ [10a-N202-9] High photoresponsivity in grain-size-controlled GaAs layers formed on glass using Ge seed layers

[10a-N202-10] In-Situ Observation and Characterization of SiGe Alloyed Films
Formed by Pre-Alloyed Pastes on Si Substrate

[10p-N202-1~19] 15.5 Group IV crystals and alloys

[10p-N202-1] Rapid trench-filling growth of Ge epitaxial layer on Si

▲ [10p-N202-2] Ge epitaxial layer with a low dislocation density grown on arrayed SOI strips

△ [10p-N202-3] Control of crack formation and propagation direction in strained SiGe/Ge(111)

▲ [10p-N202-4] Dopant Redistribution in High Temperature Grown Sb-doped Ge Epitaxial Films

[10p-N202-5] Enhancement of RT EL emission intensity in Ge-on-Si (111) diodes by annealing

[10p-N202-6] Effects of i-Ge Thickness on Room-temperature Electroluminescence from Ge-on-Si(100) p-i-n Diodes

△ [10p-N202-7] Determination of Strain-free Raman Shift from Relaxed GeSn Layer

△ [10p-N202-8] Band-Edge PL Emission from Unstrained GeSn (Sn 9%)

[10p-N202-9] Fabrication of strain-relaxed SiGe buffer layer on Si (111) and annealing effect

△ [10p-N202-10] Optical Properties of Bulk SiGe in the Near Infrared Evaluated by Spectroscopic Ellipsometry

△ [10p-N202-11] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (II)

[10p-N202-12] Resonance phenomena in uniaxial strained Ge microbridge structures

[10p-N202-13] Fabrication of strained Ge microbridge structures with meshed pads and luminescence properties

[10p-N202-14] Study on Correlation between Broad Peaks in Raman Spectra of Extremely Thin GOI Observed by Oil-Immersion Raman Spectroscopy and Strain States

[10p-N202-15] Formation of calcium silicides on SOI substrates

[10p-N202-16] Solid phase crystallization of CaGe₂ layers on insulator

△ [10p-N202-17] High quality Ge on epitaxial Co₂FeSi for semiconductor based vertical spin devices

[10p-N202-18] Impact of Substrate Heating on Surface Flattening and Ge Segregaion of Al/Ge(111)

[10p-N202-19] Crystal structure evaluation of multilayered germanane flakes by transmission powder X-ray diffraction

[23p-P08-1~2] 15.5 Group IV crystals and alloys

[23p-P08-1] Crystal growth of Si_1−xSn_x thin films on GaAs substrates

[23p-P08-2] Formation of CaGe₂ thin-films on high resistivity substrates

Authenticate

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[10a-N202-1~10] 15.5 Group IV crystals and alloys

△ [10a-N202-2] First demonstration of photoresponsivity in a polycrystalline Ge-based thin film

△ [10a-N202-3] Impact of Light-absorbing Layer on Laser-induced Liquid-phase Crystallization of GeSn Wires on Quartz Substrate

△ [10a-N202-9] High photoresponsivity in grain-size-controlled GaAs layers formed on glass using Ge seed layers

[10p-N202-1~19] 15.5 Group IV crystals and alloys

▲ [10p-N202-2] Ge epitaxial layer with a low dislocation density grown on arrayed SOI strips

△ [10p-N202-3] Control of crack formation and propagation direction in strained SiGe/Ge(111)

▲ [10p-N202-4] Dopant Redistribution in High Temperature Grown Sb-doped Ge Epitaxial Films

△ [10p-N202-7] Determination of Strain-free Raman Shift from Relaxed GeSn Layer

△ [10p-N202-8] Band-Edge PL Emission from Unstrained GeSn (Sn 9%)

△ [10p-N202-10] Optical Properties of Bulk SiGe in the Near Infrared Evaluated by Spectroscopic Ellipsometry

△ [10p-N202-11] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (II)

△ [10p-N202-17] High quality Ge on epitaxial Co2FeSi for semiconductor based vertical spin devices

[23p-P08-1~2] 15.5 Group IV crystals and alloys

Authenticate

△ [10p-N202-17] High quality Ge on epitaxial Co₂FeSi for semiconductor based vertical spin devices