The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

9 Applied Materials Science » 9.4 Thermoelectric conversion

[10a-N406-1~10] 9.4 Thermoelectric conversion

Fri. Sep 10, 2021 9:15 AM - 12:00 PM N406 (Oral)

Tsunehiro Takeuchi(Toyota Technol. Inst.), Yoshiaki Nakamura(Osaka Univ.)

10:45 AM - 11:00 AM

[10a-N406-6] Growth and thermoelectric properties of II-IV-V2 chalcopyrite compound ZnSnSb2

Yusuke Shigeeda1, Akira Nagaoka1, Kenji Yoshino1, Kensuke Nishioka1 (1.Univ. Miyazaki)

Keywords:thermoelectric conversion, chalcopyrite compound, ZnSnSb2

The II-IV-V2 chalcopyrite compound ZnSnSb2, which has pseudo-cubic structure with lattice parameter ratio c/a is nearly equal 2.00. When the lattice constant ratio, c/a, of pseudo-cubic structure is 2.00, the power factor (PF) is increase from the symmetry of the structure. We carried out growth of thermoelectric (TE) material ZnSnSb2, and investigated TE properties of ZnSnSb2. The growth mechanism of ZnSnSb2 show the peritectic reaction by supply Sn-flux. The TE performance at 300 ℃ is that the resistivity, Seebeck coefficient and thermal conductivity are 1.17 mΩ·cm, 51.3 μV/K and 1.22 mW/K.