[10a-S203-1~9] 6.3 Oxide electronics

△ [10a-S203-8] Synthesis of singe-crystal oxyfluoride thin films by field-effect-induced fluorination

〇Morito Namba¹, Haobo Li¹, Hiroshi Takatsu¹, Hiroshi Kageyama¹ (1.Kyoto Univ.)

Keywords:thin film, perovskite, ionic liquid

Low-temperature topochemical fluorination is the typical method to obtain perovskite oxyfluoride thin films. However, the anion composition cannot be controlled. In this study, we focused on the field effect using ionic liquids, and applied a negative gate voltage to the precursor SrCoO_2.5 thin film. The resultant phase is most likely SrCoO_2.5F_0.5 with oxidatively inserted fluoride ions. In this presentation, we report the structure, and electrical and magnetic properties of the obtained thin film.