[10p-N101-1~20] 15.4 III-V-group nitride crystals

△ [10p-N101-15] Size dependence of quantum efficiency for Eu emission in Eu-doped GaN

〇Toshihiro Ishihara¹, Shuhei Ichikawa^1,2, Dolf Timmerman¹, Takenori Iwaya¹, Masaaki Ashida³, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ, 2.UHVEM, osaka Univ, 3.Graduate School of Engineering Science, Osaka Univ)

Keywords:GaN, rare earth, microLED

In recent years, "micro-LEDs" have been attracting attention as a next-generation display technology, but it has been reported that the luminous efficiency of GaN-based LEDs decreases significantly due to the surface recombination that becomes apparent as their size decreases. However, rare-earth doped semiconductors have a special luminescence mechanism, which may be able to suppress the efficiency droop due to surface recombination. In this study, we performed microfabrication on GaN:Eu thin films and evaluated the size dependence of quantum efficiency on Eu emission.