[10p-N101-1~20] 15.4 III-V-group nitride crystals

△ [10p-N101-16] Photoluminescence enhancement mechanism of GaN using surface plasmon resonance with Ag nanoparticles

〇(M1)Seiya Kaito¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Prefecture Univ., 2.Kyoto Univ.)

Keywords:nitride semiconductor, plasmonics, Ag nano-particles

When we used surface plasmons resonance of Ag nanoparticles on GaN, we prevented the degradation and quenching of Ag nanoparticles by forming SiO₂ (5 nm) on GaN and then succeeded in enhancing the band edge luminescence of GaN using the quadrupole mode of Ag nanoparticles. To understand the luminescence enhancement mechanism, we estimated the Purcell effect by the finite-difference time-domain (FDTD) method and tried to reproduce the luminescence enhancement obtained experimentally. In addition, we investigated the effect of the oxide film between the GaN and Ag nanoparticles.