[10p-N101-1~20] 15.4 III-V-group nitride crystals

[10p-N101-8] Spatially resolved CL studies of h-BN films on sap. by CVD using C-free precursors

〇Shigefusa Chichibu¹, Kohei Shima¹, Naoki Umehara², Kazunobu Kojima¹, Kazuhiko Hara^2,3 (1.IMRAM-Tohoku Univ., 2.GSST-Shizuoka Univ., 3.RIE-Shizuoka Univ.)

Keywords:semiconductor, boron nitride, cathodoluminescence

Zincblende (ZB) structure BN that is a stable phase at high temperature and high pressure circumstances occasionally mixes in hexagonal (h) BN matrix during the film growth process using low-pressure CVD. In this presentation we will show spatially resolved cathodoluminescence results of such BN films to discuss the emission dynamics of indirect excitons.