[10p-N202-1~19] 15.5 Group IV crystals and alloys

△ [10p-N202-17] High quality Ge on epitaxial Co₂FeSi for semiconductor based vertical spin devices

〇Atsuya Yamada¹, Michihiro Yamada^2,3, Shinya Yamada^3,1, Kentarou Sawano⁴, Kohei Hamaya^3,1 (1.Osaka Univ., 2.JST-PRESTO., 3.CSRN, Osaka Univ., 4.Tokyo City Univ.)

Keywords:semiconductor spintronics, half metal Heusler alloys, molecular beam epitaxy