3:30 PM - 3:45 PM
[10p-N202-9] Fabrication of strain-relaxed SiGe buffer layer on Si (111) and annealing effect
Keywords:SiGe
Oral presentation
15 Crystal Engineering » 15.5 Group IV crystals and alloys
Fri. Sep 10, 2021 1:30 PM - 6:30 PM N202 (Oral)
Masashi Kurosawa(Nagoya Univ.), Kaoru Toko(Univ. of Tsukuba)
3:30 PM - 3:45 PM
Keywords:SiGe