[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-2] First-principles analysis on the behavior of oxide atom near Si/SiO₂ interface

〇Hiroki Nagakura^1,2, Koji Sueoka³, Eiji Kamiyama³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

Keywords:semiconductor, gettering, oxide precipitation