Hiroki Nagakura

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Speaker, Author, Co-Author

Fri. Sep 10, 2021 1:30 PM - 4:00 PM N203 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

1:45 PM - 2:00 PM

[10p-N203-2] First-principles analysis on the behavior of oxide atom near Si/SiO₂ interface

〇Hiroki Nagakura^1,2, Koji Sueoka³, Eiji Kamiyama³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

2:00 PM - 2:15 PM

[10p-N203-3] First-principles analysis on the behavior of Cu and Ni atom near Si/SiO₂ interface

〇Hiroki Nagakura^1,2, Koji Sueoka³, Eiji Kamiyama³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

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