Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 10, 2021 1:30 PM - 4:00 PM N203 (Oral)

Kazuhisa Torigoe(SUMCO), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-N203-1] One-dimensional array of interstitial oxygen atoms onto SiO₂/Si interface

〇Eiji Kamiyama^1,2, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

1:45 PM - 2:00 PM

[10p-N203-2] First-principles analysis on the behavior of oxide atom near Si/SiO₂ interface

〇Hiroki Nagakura^1,2, Koji Sueoka³, Eiji Kamiyama³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

2:00 PM - 2:15 PM

[10p-N203-3] First-principles analysis on the behavior of Cu and Ni atom near Si/SiO₂ interface

〇Hiroki Nagakura^1,2, Koji Sueoka³, Eiji Kamiyama³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

2:15 PM - 2:30 PM

[10p-N203-4] Characteristic of Multi-element Molecular Ion Implanted Epitaxial Wafers for 3D-stacked CIS (Ⅰ)
- Model of Hydrogen Dissociation and Association in Projection Range of CH₂P-

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

2:30 PM - 2:45 PM

[10p-N203-5] Characteristics of Multi-element Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅱ)
- Dark Current Reduction Mechanism of CH₂P Molecular Ion Implanted Epitaxial Wafers -

〇TAKESHI KADONO^1,2, Ryo Hirose¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Atsuhiko Fukuyama², Kazunari Kurita¹ (1.SUMCO CORPORATION, 2.Univ. of Miyazaki)

2:45 PM - 3:00 PM

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects
– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH₃O Molecular-Ion-Implantation-Induced Defects –

〇Akihiro Suzuki¹, Ryo Hirose¹, Takeshi Kadono¹, Koji Kobayashi¹, Ayumi Masada¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

3:15 PM - 3:30 PM

[10p-N203-7] Quality of silicon substrate and point defects (6) IR absorption of CO, NN and NO ring

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

3:30 PM - 3:45 PM

[10p-N203-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (19) Nitrogen complexes, past, present and future

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

3:45 PM - 4:00 PM

[10p-N203-9] Measurement of carbon concentration in silicon crystal
(23) Instrumental detection limit and spectral detection limit of infrared absorption

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ.)

Session information

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-1] One-dimensional array of interstitial oxygen atoms onto SiO₂/Si interface

[10p-N203-2] First-principles analysis on the behavior of oxide atom near Si/SiO₂ interface

[10p-N203-3] First-principles analysis on the behavior of Cu and Ni atom near Si/SiO₂ interface

[10p-N203-4] Characteristic of Multi-element Molecular Ion Implanted Epitaxial Wafers for 3D-stacked CIS (Ⅰ)
- Model of Hydrogen Dissociation and Association in Projection Range of CH₂P-

[10p-N203-5] Characteristics of Multi-element Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅱ)
- Dark Current Reduction Mechanism of CH₂P Molecular Ion Implanted Epitaxial Wafers -

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects
– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH₃O Molecular-Ion-Implantation-Induced Defects –

[10p-N203-7] Quality of silicon substrate and point defects (6) IR absorption of CO, NN and NO ring

[10p-N203-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (19) Nitrogen complexes, past, present and future

[10p-N203-9] Measurement of carbon concentration in silicon crystal
(23) Instrumental detection limit and spectral detection limit of infrared absorption

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Session information

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH3O Molecular-Ion-Implantation-Induced Defects –

Authenticate

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects
– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH₃O Molecular-Ion-Implantation-Induced Defects –