Naohisa Inoue

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Speaker, Author, Co-Author

Fri. Sep 10, 2021 1:30 PM - 4:00 PM N203 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

3:15 PM - 3:30 PM

[10p-N203-7] Quality of silicon substrate and point defects (6) IR absorption of CO, NN and NO ring

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

3:30 PM - 3:45 PM

[10p-N203-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (19) Nitrogen complexes, past, present and future

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

3:45 PM - 4:00 PM

[10p-N203-9] Measurement of carbon concentration in silicon crystal
(23) Instrumental detection limit and spectral detection limit of infrared absorption

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ.)