[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-7] Quality of silicon substrate and point defects (6) IR absorption of CO, NN and NO ring

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

Keywords:silicon crystal, impurity, infrared absorption

Silicon device has become the brain and the heart of the world. Nitrogen doping is widely used to suppress grown-in microdefects in the substrate for IC chip. Dominant state of N is Si-N-Si-N 4-atom NN ring. Carbon is used to control lifetime of power device. Its configuration CO ring. Therefore, the human life is constructed on this ring. In addition, shallow thermal donor (STD) and O dimer are composed of NO and sometimes of OO ring. IR absorption with theoretical analysis made it possible to find, identify, measure, analyze kinetics and reveal the role in device of them.