[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (19) Nitrogen complexes, past, present and future

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

Keywords:silicon crystal, nitrogen, infrared absorption

Nitrogen makes various complexes with vacancy (V), interstitial (I), C and O. Detection and assignment by IR was difficult due to low concentration for experiment and to complicated configuration for theoretical work. Moreover, the absorption from other complexes must be excluded. Improvement of sensitivity of experiment from 10¹⁴ to below 10¹³/cm³ and accuracy of wavenumber calculation from 80 cm^-1 to less than 1% solved most problems. Future: Assignment of known absorption peaks, detection of more STD and IN complexes, and analysis of behavior of V-I-O complexes in growing silicon is expected.