Oral presentation

[10a-N203-1~10] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 10, 2021 9:00 AM - 11:45 AM N203 (Oral)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Takuto Kojima(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-N203-1] Investigation of Constitutional Supercooling during Cz Silicon Growth by Numerical Modeling

〇(D)Yuji Mukaiyama^1,2, Vladimir Artemiev³, Vladimir Kalaev³, Koji Sueoka⁴ (1.Graduate School of Okayama Pref. Univ., 2.STR Japan K.K., 3.STR Group, Inc., 4.Okayama Pref. Univ.)

9:15 AM - 9:30 AM

[10a-N203-2] First principle spectroscopic calculation for RIXS through Radial part solutions of Electron distribution wavefuncion

〇Jun Inagaki¹ (1.Tamkang University)

9:30 AM - 9:45 AM

△ [10a-N203-3] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (3)

〇(M2)Takuto Ushiro¹, Tatsuya Yokoi², Yusuke Noda³, Eiji Kamiyama³, Masato Ohbitsu¹, Hiroki Nagakura¹, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Okayama Pref. Univ.)

9:45 AM - 10:00 AM

△ [10a-N203-4] ANN potential analysis on stability of extended interstitial defects in Si crystal

〇(M2)Masato Ohbitsu¹, Tatsuya Yokoi², Eiji Kamiyama³, Takuto Ushiro¹, Hiroki Nagakura¹, Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Okayama Pref. Univ.)

10:15 AM - 10:30 AM

[10a-N203-5] Parameter identification for thermal fluid simulation in crystal growth using multi-data

〇Hiroyuki Tanaka¹, Kentaro Kutsukake², Takuto Kojima³, Xin Liu¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.AIP, RIKEN, 3.Graduate School of Info., Nagoya Univ.)

10:30 AM - 10:45 AM

[10a-N203-6] 3D multicrystalline Si modeling by experiments and data scientific methods
and finite element stress analysis

〇Kenta Yamakoshi¹, Kentaro Kutsukake², Takuto Kojima³, Hiroaki Kudo³, Noritaka Usami¹ (1.Grad. Eng. Nagoya Univ., 2.RIKEN AIP, 3.Grad. Info. Nagoya Univ.)

10:45 AM - 11:00 AM

[10a-N203-7] Growth angle dependence of Basal plane dislocation density in a PVT-SiC crystal

〇Koichi Kakimoto¹, Satoshi Nakano¹ (1.RIAM, Kyushu Univ.)

11:00 AM - 11:15 AM

[10a-N203-8] Evaluation of dislocation in ScAlMgO₄ crystal by transmission X-ray topography

〇Kotaro Ishiji¹, Takashi Fujii^2,3, Tsutomu Araki², Tsuguo Fukuda³ (1.SAGA-LS, 2.Ritsumeikan Univ, 3.Fukuda Crystal Lab)

11:15 AM - 11:30 AM

[10a-N203-9] Phase transitions and crystal structure of BaTiO₃ polyhedra

〇Reiji Yamauchi¹, Sangwook Kim¹, Chikako Moriyoshi¹, Yoshihiro Kuroiwa¹, Ichiro Fujii², Shintaro Ueno², Satoshi Wada² (1.Hiroshima Univ., 2.Univ. of Yamanashi.)

11:30 AM - 11:45 AM

[10a-N203-10] Precise detection of carrier lifetime limited by surface-recombination processes
in GaAs (110) using time-resolved two-photon photoemission spectroscopy

〇Shuhei Ichikawa^1,2, Hidehiro Yasuda^1,2 (1.Research Center for UHVEM, Osaka Univ., 2.Osaka Univ.)

Oral presentation

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 10, 2021 1:30 PM - 4:00 PM N203 (Oral)

Kazuhisa Torigoe(SUMCO), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-N203-1] One-dimensional array of interstitial oxygen atoms onto SiO₂/Si interface

〇Eiji Kamiyama^1,2, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

1:45 PM - 2:00 PM

[10p-N203-2] First-principles analysis on the behavior of oxide atom near Si/SiO₂ interface

〇Hiroki Nagakura^1,2, Koji Sueoka³, Eiji Kamiyama³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

2:00 PM - 2:15 PM

[10p-N203-3] First-principles analysis on the behavior of Cu and Ni atom near Si/SiO₂ interface

〇Hiroki Nagakura^1,2, Koji Sueoka³, Eiji Kamiyama³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

2:15 PM - 2:30 PM

[10p-N203-4] Characteristic of Multi-element Molecular Ion Implanted Epitaxial Wafers for 3D-stacked CIS (Ⅰ)
- Model of Hydrogen Dissociation and Association in Projection Range of CH₂P-

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

2:30 PM - 2:45 PM

[10p-N203-5] Characteristics of Multi-element Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅱ)
- Dark Current Reduction Mechanism of CH₂P Molecular Ion Implanted Epitaxial Wafers -

〇TAKESHI KADONO^1,2, Ryo Hirose¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Atsuhiko Fukuyama², Kazunari Kurita¹ (1.SUMCO CORPORATION, 2.Univ. of Miyazaki)

2:45 PM - 3:00 PM

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects
– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH₃O Molecular-Ion-Implantation-Induced Defects –

〇Akihiro Suzuki¹, Ryo Hirose¹, Takeshi Kadono¹, Koji Kobayashi¹, Ayumi Masada¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

3:15 PM - 3:30 PM

[10p-N203-7] Quality of silicon substrate and point defects (6) IR absorption of CO, NN and NO ring

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

3:30 PM - 3:45 PM

[10p-N203-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (19) Nitrogen complexes, past, present and future

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Pref. Univ.)

3:45 PM - 4:00 PM

[10p-N203-9] Measurement of carbon concentration in silicon crystal
(23) Instrumental detection limit and spectral detection limit of infrared absorption

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Pref. Univ.)

Poster presentation

[23p-P10-1~2] 15.7 Crystal characterization, impurities and crystal defects

Thu. Sep 23, 2021 1:00 PM - 2:40 PM P10 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 2:40 PM

[23p-P10-1] Characterization of deep level defects in (111) B-doped CVD diamond films using the transient photocapacitance method

〇Osamu Maida¹, Taishi Kodama¹, Daisuke Kanemoto¹, Tetsuya Hirose¹ (1.Osaka Univ.)

1:00 PM - 2:40 PM

[23p-P10-2] Degradation of Photoluminescence Intensity of GaAs under High Power Density Excitation

Shohei Takaoka¹, Sultan Md. Zamil^1,2, 〇Kengo Takamiya¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.HSTU)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[10a-N203-1~10] 15.7 Crystal characterization, impurities and crystal defects

[10a-N203-1] Investigation of Constitutional Supercooling during Cz Silicon Growth by Numerical Modeling

[10a-N203-2] First principle spectroscopic calculation for RIXS through Radial part solutions of Electron distribution wavefuncion

△ [10a-N203-3] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (3)

△ [10a-N203-4] ANN potential analysis on stability of extended interstitial defects in Si crystal

[10a-N203-5] Parameter identification for thermal fluid simulation in crystal growth using multi-data

[10a-N203-6] 3D multicrystalline Si modeling by experiments and data scientific methods
and finite element stress analysis

[10a-N203-7] Growth angle dependence of Basal plane dislocation density in a PVT-SiC crystal

[10a-N203-8] Evaluation of dislocation in ScAlMgO₄ crystal by transmission X-ray topography

[10a-N203-9] Phase transitions and crystal structure of BaTiO₃ polyhedra

[10a-N203-10] Precise detection of carrier lifetime limited by surface-recombination processes
in GaAs (110) using time-resolved two-photon photoemission spectroscopy

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

[10p-N203-1] One-dimensional array of interstitial oxygen atoms onto SiO₂/Si interface

[10p-N203-2] First-principles analysis on the behavior of oxide atom near Si/SiO₂ interface

[10p-N203-3] First-principles analysis on the behavior of Cu and Ni atom near Si/SiO₂ interface

[10p-N203-4] Characteristic of Multi-element Molecular Ion Implanted Epitaxial Wafers for 3D-stacked CIS (Ⅰ)
- Model of Hydrogen Dissociation and Association in Projection Range of CH₂P-

[10p-N203-5] Characteristics of Multi-element Molecular Ion Implanted Epitaxial Silicon Wafers for 3D-Stacked CMOS Image Sensors (Ⅱ)
- Dark Current Reduction Mechanism of CH₂P Molecular Ion Implanted Epitaxial Wafers -

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects
– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH₃O Molecular-Ion-Implantation-Induced Defects –

[10p-N203-7] Quality of silicon substrate and point defects (6) IR absorption of CO, NN and NO ring

[10p-N203-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (19) Nitrogen complexes, past, present and future

[10p-N203-9] Measurement of carbon concentration in silicon crystal
(23) Instrumental detection limit and spectral detection limit of infrared absorption

[23p-P10-1~2] 15.7 Crystal characterization, impurities and crystal defects

[23p-P10-1] Characterization of deep level defects in (111) B-doped CVD diamond films using the transient photocapacitance method

[23p-P10-2] Degradation of Photoluminescence Intensity of GaAs under High Power Density Excitation

Authenticate

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[10a-N203-1~10] 15.7 Crystal characterization, impurities and crystal defects

△ [10a-N203-3] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (3)

△ [10a-N203-4] ANN potential analysis on stability of extended interstitial defects in Si crystal

[10p-N203-1~9] 15.7 Crystal characterization, impurities and crystal defects

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH3O Molecular-Ion-Implantation-Induced Defects –

[23p-P10-1~2] 15.7 Crystal characterization, impurities and crystal defects

Authenticate

△ [10p-N203-6] In Situ TEM Observation of Thermal Behavior of Multielement-Molecular-Ion-Implantation-Induced Defects
– Reaction Kinetic Analysis of Thermal Dissolution Behavior of CH₃O Molecular-Ion-Implantation-Induced Defects –